Title :
SiGe-Channel Confinement Effects for Short-Channel PFETs With Nonbandedge Gate Workfunctions
Author :
Winstead, B. ; Taylor, W.J. ; Verret, E. ; Loiko, K. ; Tekleab, D. ; Capasso, C. ; Foisy, M. ; Samavedam, S.B.
Author_Institution :
IEEE, Austin
Abstract :
Thin SiGe-channel confinement is found to provide significant control of the short channel effects typically associated with nonbandedge gate electrodes, in an analogous manner to ultrathin-body approaches. Gate workfunction requirements for thin-SiGe-channel p-type field effect transistors are therefore relaxed substantially more than what is expected from a simple observation of the difference between gate and channel workfunctions. In particular, thin-SiGe channels are shown to enable cost-effective high-performance bulk CMOS technologies with a single gate workfunction near the conduction bandedge. Buried channel, gate workfunction, metal gate, SiGe-channel confinement effects, SiGe-channel MOSFET, silicon germanium, ultrathin-body (UTB).
Keywords :
CMOS integrated circuits; Ge-Si alloys; electrodes; field effect transistors; semiconductor materials; CMOS technologies; SiGe - Interface; channel confinement effects; nonbandedge gate electrodes; nonbandedge gate workfunctions; p-type field effect transistors; short-channel PFET; CMOS technology; Computational modeling; Degradation; Dielectrics; Electrodes; FETs; Germanium silicon alloys; MOSFET circuits; Permittivity; Silicon germanium; Buried channel; SiGe-channel MOSFET; SiGe-channel confinement effects; gate workfunction; metal gate; silicon germanium; ultrathin-body (UTB);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.900860
