Title :
Direct-coupled logic operation of GaAs column gate FET
Author :
Ishii, Y. ; Asai, K. ; Ino, M. ; Kobayashi, M. ; Kurumada, K.
Author_Institution :
Nippon Telegraph & Telephone Public Corporation, Tokyo, Japan
fDate :
5/1/1981 12:00:00 AM
Abstract :
A ring oscillator operation is demonstrated employing normally-off 2 µm diameter column gate FET with 145 ps/gate delay time and with 64 fJ power-delay product. Delay time is discussed in terms of CR time constant comparison between MES and column structure. The column gate FET can realize much smaller "on" resistance comparing with MESFET.
Keywords :
Capacitance; Chromium; Delay effects; FETs; Gallium arsenide; Inverters; Logic; Propagation delay; Resists; Ring oscillators;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25364
