Title :
A bistable MOSFET-type metal-tunnel insulator-semiconductor switch
Author :
Dell, J.M. ; Davis, M.J. ; Nassibian, A.G.
Author_Institution :
University of Western Australia, Nedlands, Western Australia
fDate :
5/1/1981 12:00:00 AM
Abstract :
A new lateral bistable switching structure including an ultra-thin tunnel oxide is presented. The device has an S-type negative resistance characteristic similar to that of a thyristor. Switching between the two stable states is controlled by a MOS-type gate. The device exhibits linear gate control of the switching voltage, a property not shown by other thin-oxide switching structures. The gate can also be used to turn the device off because of variation in the holding current with gate bias.
Keywords :
Diodes; Electrons; Impedance; Insulation; MOSFETs; Metal-insulator structures; Silicon; Solid state circuits; Switches; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25365
