Title :
Integrated PbS-Si IR detector read-out
Author :
Tam, K.Y. ; Steckl, A.J.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, New York
fDate :
5/1/1981 12:00:00 AM
Abstract :
A novel technique for direct integration of PbS-Si heterojunction IR detectors and read-out circuitry using planar Si technology has been developed and implemented. X-Y address read-out mode of a detector array has been demonstrated. Injection efficiency of close to unity has been obtained under optimum bias condition at room temperature.
Keywords :
Charge coupled devices; Charge-coupled image sensors; Conductivity; Fabrication; Heterojunctions; Infrared detectors; MOSFET circuits; Photonic band gap; Sensor arrays; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25368
