Weak inversion characteristics of the fully depleted SOS MOSFET

The weak inversion characteristics of fully depleted, edgeless N-channel SOS transistors were studied both experimentally and theoretically. It was found that in some cases the weak inversion characteristic was dominated by minority carrier conduction at silicon-sapphire interface rather than the silicon-oxide interface. For the cases in which the weak inversion conduction was dominated by the silicon-sapphire interface the log IDS-VGSslopes were shallow, leakage currents high, and threshold voltages low.