Title :
GaAs FETs having high output power per unit gate width
Author :
Macksey, H.M. ; Doerbeck, F.H.
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
fDate :
6/1/1981 12:00:00 AM
Abstract :
GaAs power FETs with output powers per unit gate width up to 1.4 W/mm have been fabricated. The factors contributing to this high output power are discussed.
Keywords :
Doping; Frequency; Gain; Gallium arsenide; Indium phosphide; Laboratories; Microwave FETs; Power generation; Testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25376
