DocumentCode :
1077467
Title :
GaAs MESFET fabrication using maskless ion implantation
Author :
Kubena, R.L. ; Anderson, C.L. ; Seliger, R.L. ; Jullens, R.A. ; Stevens, E.H.
Author_Institution :
Hughes Research Laboratories, Malibu, CA
Volume :
2
Issue :
6
fYear :
1981
fDate :
6/1/1981 12:00:00 AM
Firstpage :
152
Lastpage :
154
Abstract :
A 2000-Å-diameter focused-ion beam from a Au-Si liquid-metal-alloy ion source was used to implant the doped regions of GaAs metal-semiconductor gate field-effect transistors. An Al stopping layer on the wafer was used to trap the Au ions. The 140-keV Si++beam component was deflected under computer control to implant 8 × 50 µm active channel regions and 16 × 50 µm contact regions. The devices were metallized using conventional lithography. DC electrical characteristics of the 1.5-µm-gate-length devices are comparable to those of conventionally processed devices of identical geometry.
Keywords :
Contacts; FETs; Fabrication; Gallium arsenide; Gold; Implants; Ion implantation; Ion sources; MESFETs; Metallization;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1981.25378
Filename :
1481862
Link To Document :
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