• DocumentCode
    1077504
  • Title

    GaAs J-FET formed by localized Zn diffusion

  • Author

    Dohsen, M. ; Kasahara, J. ; Kato, Y. ; Watanabe, N.

  • Author_Institution
    Sony Corporation Research Center, Yokohama, Japan
  • Volume
    2
  • Issue
    7
  • fYear
    1981
  • fDate
    7/1/1981 12:00:00 AM
  • Firstpage
    157
  • Lastpage
    158
  • Abstract
    The GaAs J-FET in normally-off mode was successfully fabricated by using localized ion implantation for the n region and localized diffusion for the p region. The atmospheric pressure diffusion system utilizing the metal-organics as the sources of Zn and As was used to define p+-gate region of the J-FET. The diffused area defined with a plasma deposited Si3N4mask was formed without appreciable anomalous diffusion to the lateral direction. The J-FET fabricated has high transconductance of 0.11 mS/µm for the device of the gate length of 2 µm in normally-off mode.
  • Keywords
    FETs; Fluid flow; Gallium arsenide; Ion implantation; Logic devices; MESFETs; Plasma applications; Plasma immersion ion implantation; Plasma sources; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25381
  • Filename
    1481865
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077504