GaAs J-FET formed by localized Zn diffusion

The GaAs J-FET in normally-off mode was successfully fabricated by using localized ion implantation for the n region and localized diffusion for the p region. The atmospheric pressure diffusion system utilizing the metal-organics as the sources of Zn and As was used to define p⁺-gate region of the J-FET. The diffused area defined with a plasma deposited Si3N4mask was formed without appreciable anomalous diffusion to the lateral direction. The J-FET fabricated has high transconductance of 0.11 mS/µm for the device of the gate length of 2 µm in normally-off mode.