• DocumentCode
    1077539
  • Title

    MNOS/CCD nonvolatile analog memory

  • Author

    Withers, R.S. ; Silversmith, D.J. ; Mountain, R.W.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, MA
  • Volume
    2
  • Issue
    7
  • fYear
    1981
  • fDate
    7/1/1981 12:00:00 AM
  • Firstpage
    165
  • Lastpage
    166
  • Abstract
    MNOS storage sites have been integrated with an n-channel CCD to produce a nonvolatile memory capable of storing sampled analog signals. Analog signals, sampled at the CCD input, are stored as trapped charge in the MNOS dielectric and may be replicated nondestructively after four days of storage with a linear dynamic range of 33 dB.
  • Keywords
    Analog memory; Charge coupled devices; Clocks; Dynamic range; Fabrication; Nonvolatile memory; Silicon; Tunneling; Voltage; Writing;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25384
  • Filename
    1481868
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077539