Title :
Partial discharges phenomenon in high voltage power modules
Author :
Lebey, Th ; Malec, D. ; Dinculescu, S. ; Costan, V. ; Breit, F. ; Dutarde, E.
Author_Institution :
Lab. de Genie Electr., Univ. Paul Sabatier, Toulouse
Abstract :
Partial discharges measurements have been performed on 3.3 kV IGBT power modules. Results using both the normalized and a new proposed test are compared. The new test, allowing the detection of partial discharges in all the insulating materials, is detailed. Elementary defect patterns are used to distinguish the main cause (dies or insulating materials) of the observed partial discharges in IGBT modules
Keywords :
insulated gate bipolar transistors; insulating materials; insulation testing; packaging; partial discharge measurement; power bipolar transistors; power field effect transistors; 3.3 kV; IGBT power module; insulating material; packaging; partial discharge measurement; power semiconductor switches; Conducting materials; Insulated gate bipolar transistors; Insulation; Multichip modules; Packaging; Partial discharges; Semiconductor materials; Testing; Thermal conductivity; Voltage;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
DOI :
10.1109/TDEI.2006.1667740
