Title :
New type InGaAs/InP heterostructure avalanche photodiode with buffer layer
Author :
Matsushima, Y. ; Sakai, K. ; Noda, Y.
Author_Institution :
KDD Research and Development Laboratories, Meguro-ku, Tokyo, Japan
fDate :
7/1/1981 12:00:00 AM
Abstract :
A new type heterostructure avalanche photodiode (HAPD) is proposed and successfully fabricated by liquid phase epitaxy and Zn-diffusion. The HAPD has been made from a successively grown wafer which consists of In0.53Ga0.47As light absorption layer, InGaAsP buffer layers and InP avalanche multiplication layer on n-InP substrate. Dark current density of 1 × 10-4Acm-2at 0.9 VBis achieved. When illuminating with 1.15 µm light, the diode has a maximum multiplication gain of 880 and an external quantum efficiency of 40%. The quantum efficiency is markedly improved than that of previously reported HAPD.
Keywords :
Absorption; Avalanche photodiodes; Buffer layers; Dark current; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Optical fiber devices; Semiconductor diodes; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25390
