DocumentCode
1077623
Title
Effect of lifetime on SOS capacitance measurements
Author
Hamner, S. ; Farrington, D. ; Levis, M.
Author_Institution
Hewlett-Packard, Cupertino Integrated Circuits Operation, Cupertino, CA
Volume
2
Issue
7
fYear
1981
fDate
7/1/1981 12:00:00 AM
Firstpage
187
Lastpage
189
Abstract
For SOS devices, the capacitance-voltage curves at various frequencies differ dramatically between MOS capacitors with and without a sidewall. This is explained in terms of the increase in minority carrier generation rate as the silicon-sapphire interface is approached. In some cases, this property facilitates the determination of the threshold voltage of the parasitic sidewall capacitor.
Keywords
Capacitance measurement; Capacitance-voltage characteristics; Frequency measurement; Helium; Integrated circuit measurements; MOS capacitors; MOSFET circuits; Silicon; Steady-state; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1981.25393
Filename
1481877
Link To Document