Title :
Resistivity increase in MBE Ga0.47In0.53As following ion bombardment
Author :
Barnard, J. ; Wood, C.E.C. ; Eastman, L.F.
Author_Institution :
Cornell University, Ithaca, New York
fDate :
8/1/1981 12:00:00 AM
Abstract :
Resistivity increase was compared following various doses of different 100 kV ions implanted into Ga0.47In0.53As. The largest resistivity increase of n-type Ge doped GaInAs resulted from a boron ion implant, and increased to a total of 280 times the original resistivity after heating for 15 minutes at 200°C. Boron ion bombardment can be used to isolate devices in a planar GaInAs integrated circuit process.
Keywords :
Boron; Conductivity; DH-HEMTs; Detectors; Indium phosphide; MESFETs; MOSFET circuits; Metallization; Molecular beam epitaxial growth; Resists;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25398
