Title :
A phototransistor with concentric electrodes on the Si substrate
Author :
Chen, C.W. ; Gustafson, T.K.
Author_Institution :
University of California, Berkeley, California
fDate :
8/1/1981 12:00:00 AM
Abstract :
A high-speed phototransistor with concentric lateral electrodes was fabricated on the Si substrate. The optical gain for continuous wave He-Ne laser excitation can be as high as 80. The pulse width in response to mode-locked laser pulses is 220 ps. A bandwidth of 1.7 GHz was observed for saturated unity-gain operation. The capability of being integrated is potentially useful in realizing high-speed optical receivers.
Keywords :
Bandwidth; Electrodes; High speed optical techniques; Laser excitation; Laser mode locking; Optical pulses; Optical receivers; Optical saturation; Phototransistors; Space vector pulse width modulation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25401
