DocumentCode
1077703
Title
A phototransistor with concentric electrodes on the Si substrate
Author
Chen, C.W. ; Gustafson, T.K.
Author_Institution
University of California, Berkeley, California
Volume
2
Issue
8
fYear
1981
fDate
8/1/1981 12:00:00 AM
Firstpage
200
Lastpage
202
Abstract
A high-speed phototransistor with concentric lateral electrodes was fabricated on the Si substrate. The optical gain for continuous wave He-Ne laser excitation can be as high as 80. The pulse width in response to mode-locked laser pulses is 220 ps. A bandwidth of 1.7 GHz was observed for saturated unity-gain operation. The capability of being integrated is potentially useful in realizing high-speed optical receivers.
Keywords
Bandwidth; Electrodes; High speed optical techniques; Laser excitation; Laser mode locking; Optical pulses; Optical receivers; Optical saturation; Phototransistors; Space vector pulse width modulation;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1981.25401
Filename
1481885
Link To Document