• DocumentCode
    1077725
  • Title

    Single-carrier space-charge controlled conduction vs. ballistic transport in GaAs devices at 77° K

  • Author

    Schmidt, P.E. ; Octavio, M. ; Esqueda, P.D.

  • Author_Institution
    Instituto Venezolano de Investigaciones Científicas, Caracas, Venezuela
  • Volume
    2
  • Issue
    8
  • fYear
    1981
  • fDate
    8/1/1981 12:00:00 AM
  • Firstpage
    205
  • Lastpage
    207
  • Abstract
    Single-carrier space-charge controlled in n+n n+GaAs structures at 77°K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the "ballistic" transport theory.
  • Keywords
    Ballistic transport; Costs; Electrons; Gallium arsenide; Glass; III-V semiconductor materials; Photovoltaic cells; Physics; Reflection; Wavelength conversion;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25403
  • Filename
    1481887
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077725