• DocumentCode
    1077811
  • Title

    Controlled Zn diffusion for low threshold narrow stripe GaAlAs/GaAs DH lasers

  • Author

    Hong, C.S. ; Liu, Y.Z. ; Dapkus, P.D. ; Coleman, J.J.

  • Author_Institution
    Rockwell International/MRDC, Thousand Oaks, CA
  • Volume
    2
  • Issue
    9
  • fYear
    1981
  • fDate
    9/1/1981 12:00:00 AM
  • Firstpage
    225
  • Lastpage
    227
  • Abstract
    Zn diffusion was accurately controlled to reach within the active region of a GaAlAs/GaAs DH laser. The diffused 4 µm stripe lasers have threshold currents as low as 40 mA and exhibit single longitudinal mode oscillation in a wide range of current levels.
  • Keywords
    DH-HEMTs; Diffusion processes; Gallium arsenide; Laser modes; Optical control; Optical waveguides; Semiconductor lasers; Threshold current; Waveguide lasers; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25412
  • Filename
    1481896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1077811