Title :
Controlled Zn diffusion for low threshold narrow stripe GaAlAs/GaAs DH lasers
Author :
Hong, C.S. ; Liu, Y.Z. ; Dapkus, P.D. ; Coleman, J.J.
Author_Institution :
Rockwell International/MRDC, Thousand Oaks, CA
fDate :
9/1/1981 12:00:00 AM
Abstract :
Zn diffusion was accurately controlled to reach within the active region of a GaAlAs/GaAs DH laser. The diffused 4 µm stripe lasers have threshold currents as low as 40 mA and exhibit single longitudinal mode oscillation in a wide range of current levels.
Keywords :
DH-HEMTs; Diffusion processes; Gallium arsenide; Laser modes; Optical control; Optical waveguides; Semiconductor lasers; Threshold current; Waveguide lasers; Zinc;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25412
