Frequency response theory for multilayer photodiodes

Author

Hollenhorst, James N.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

8

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

531

Lastpage

537

Abstract

An exact solution is developed for the frequency response of photodiodes composed of multiple spatially uniform layers. Each layer is analyzed separately to obtain a set of linear response coefficients. The response of the multilayer diodes is calculated using matrix algebra. Effects of carrier transit, electron and hole trapping, avalanche decay, and finite absorption length are included in the analysis. The results of R.B. Emmons (1967) and G. Lucovsky et al. (1958) for avalanche photodiodes (APDs) and p-i-n´s, respectively, are obtained as special cases. The theory is illustrated by applying it to the separated absorption and multiplication

Keywords

avalanche photodiodes; electron traps; hole traps; matrix algebra; p-i-n diodes; avalanche decay; avalanche photodiodes; carrier transit; electron trapping; finite absorption length; frequency response; frequency response time; hole trapping; linear response coefficients; matrix algebra; multilayer photodiodes; multiple spatially uniform layers; multiplication; p-i-n; Absorption; Bit rate; Charge carrier processes; Communication systems; Electron mobility; Frequency response; Matrices; Nonhomogeneous media; P-i-n diodes; Photodiodes;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.50759

Filename

50759