Title :
MOSFET´s on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate
Author :
Maby, E.W. ; Geis, M.W. ; LeCoz, Y.L. ; Silversmith, D.J. ; Mountain, R.W. ; Antoniadis, Dimitri A. ; Antoniadis, D.A.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, MA
fDate :
10/1/1981 12:00:00 AM
Abstract :
We report a process for the recrystallization of thin silicon films on silicon dioxide that uses a composite encapsulation layer of silicon dioxide and silicon nitride in conjunction with zone melting by a moveable strip heater. The recrystallization process achieves large-grained
Keywords :
Crystalline materials; Crystallization; Current measurement; Encapsulation; Insulation; Leakage current; Semiconductor films; Silicon compounds; Strips; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25418
