DocumentCode
1077892
Title
Gunn oscillation in GaAs optically triggered by 1.06 µm radiation
Author
Chin, R. ; Nakano, K. ; Coleman, J.J. ; Dapkus, P.D.
Author_Institution
Rockwell International Center, Thousand Oaks, CA
Volume
2
Issue
10
fYear
1981
fDate
10/1/1981 12:00:00 AM
Firstpage
248
Lastpage
249
Abstract
Gunn oscillation triggered by 1.06 µm radiation in an MO-CVD grown GaAlAs-GaAs heterostructure is reported. In these devices, oscillations were found to occur in two separate ranges of bias voltage. The frequency of operation as well as the probability of the initiation of oscillation were found to be dependent upon the excitation beam location.
Keywords
Frequency; Gallium arsenide; Gunn devices; MOCVD; Optical buffering; Optical devices; Optical harmonic generation; Optical pulses; Optical variables control; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1981.25420
Filename
1481904
Link To Document