Resonant-Cavity-Enhanced Single-Photon Avalanche Diodes on Reflecting Silicon Substrates

Author

Ghioni, Massimo ; Armellini, Giacomo ; Maccagnani, Piera ; Rech, Ivan ; Emsley, Matthew K. ; Ünlü, M. Selim

Author_Institution

Politecnico di Milano, Milan

Volume

20

Issue

6

fYear

2008

fDate

3/15/2008 12:00:00 AM

Firstpage

413

Lastpage

415

Abstract

In this letter, we report the first resonant-cavity-enhanced single-photon avalanche diode (RCE SPAD) fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two-period distributed Bragg reflector fabricated using a commercially available double-SOI process. The RCE SPAD detectors have peak photon detection efficiencies ranging from 42% at 780 nm to 34% at 850 nm and time resolution of 35-ps full-width at half-maximum. Typical dark count rates of 450, 3500, and 100 000 c/s were measured at room temperature with RCE SPADs having, respectively 8-, 20-, and 50-mum diameter.

Keywords

avalanche photodiodes; dark conductivity; distributed Bragg reflectors; integrated optics; photodetectors; photon counting; Si; dark count rates; double-SOI process; photon detection efficiencies; reflecting silicon-on-insulator substrate; resonant-cavity-enhanced single-photon avalanche diode; temperature 293 K to 298 K; two-period distributed Bragg reflector; wavelength 780 nm to 850 nm; Detectors; Diodes; Distributed Bragg reflectors; Low voltage; Photonics; Resonance; Silicon on insulator technology; Substrates; Temperature measurement; Timing; Photon counting; resonant cavity enhanced (RCE); silicon-on-insulator (SOI); single-photon avalanche diode (SPAD); time-correlated single-photon counting (TCSPC);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.916926

Filename

4455659