Title :
InAs–InP (1.55- μm Region) Quantum-Dot Microring Lasers
Author :
Hill, Martin T. ; Anantathanasarn, S. ; Zhu, Y. ; Oei, Y.-S. ; van Veldhoven, P.J. ; Smit, M.K. ; Nötzel, R.
Author_Institution :
Eindhoven Univ. of Technol., Eindhoven
fDate :
3/15/2008 12:00:00 AM
Abstract :
In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-mum telecom wavelength range. The 2-mum-wide ring waveguides are made from InGaAsP-InP (100) material suitable for active-passive photonic integrated circuits. Lasing in rings down to 22 mum in diameter is found, with a threshold current of 12.5 mA.
Keywords :
II-VI semiconductors; indium compounds; integrated optics; quantum dot lasers; ring lasers; semiconductor quantum dots; active-passive photonic integrated circuits; current 12.5 mA; electrically pumped continuous-wave lasing; quantum-dot microring lasers; Laser excitation; Optical materials; Photonic integrated circuits; Pump lasers; Quantum dots; Ring lasers; Telecommunications; Temperature; Threshold current; Waveguide lasers; Integrated optics; microring lasers; quantum dots (QDs); semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.916963
