Title :
Sheet resistance-junction depth relationships in implanted arsenic diffusion
Author :
Liu, T.M. ; Oldham, W.G.
Author_Institution :
University of California, Berkeley, CA
fDate :
10/1/1981 12:00:00 AM
Abstract :
A design graph for arsenic diffusion has been constructed based on a Chebyshev polynomial approximation of the arsenic implantation/diffusion profile. Systematic experiments of arsenic implantation/ diffusion were done to support the design graph. The ultimate limitations of arsenic shallow junction design are defined.
Keywords :
Boron; Chebyshev approximation; Diffusion processes; Doping profiles; Implants; Polynomials; Silicon; Surface resistance; Tail; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25430
