Title :
A 55-kW Three-Phase Inverter With Si IGBTs and SiC Schottky Diodes
Author :
Ozpineci, Burak ; Chinthavali, Madhu Sudhan ; Tolbert, Leon M. ; Kashyap, Avinash S. ; Mantooth, H. Alan
Author_Institution :
Power Electron. & Electr. Machinery Res. Center, Oak Ridge Nat. Lab., Oak Ridge, TN
Abstract :
Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron´s automotive inverter with Cree´s made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.
Keywords :
Schottky diodes; automotive electronics; circuit simulation; hybrid electric vehicles; insulated gate bipolar transistors; invertors; power convertors; silicon compounds; IGBT; Oak Ridge National Laboratory; Schottky diodes; Semikron´s automotive inverter; SiC; circuit simulator; hybrid electric vehicle; insulated-gate bipolar transistor; low current ratings; p-n diodes; power 55 kW; power converter efficiency; three-phase inverter; Automotive engineering; Circuit simulation; Circuit testing; Collaboration; Insulated gate bipolar transistors; Insulation; Inverters; Laboratories; Schottky diodes; Silicon carbide; DC–AC conversion; Schottky diode; hybrid electric vehicle, insulated-gate bipolar transistors (IGBTs); insulated-gate bipolar transistors (IGBTs); inverter; silicon carbide (SiC);
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2008.2009501
