DocumentCode :
1078031
Title :
Low dark-current, high-efficiency planar In0.53Ga0.47As/InP P-I-N photodiodes
Author :
Forrest, S.R. ; Camlibel, I. ; Kim, O.K. ; Stocker, H.J. ; Zuber, J.R.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
Volume :
2
Issue :
11
fYear :
1981
fDate :
11/1/1981 12:00:00 AM
Firstpage :
283
Lastpage :
285
Abstract :
We have fabricated high quantum efficiency, high speed, low dark-current In0.53Ga0.47As/InP p-i-n planar photodiodes Which meet the performance requirements of long-wavelength optical communications systems. The diodes employ plasma deposited SiNxas a mask to Zn diffusion. The dark-current density at 10 V is J = 5 × 10-5A/cm2with a corresponding capacitance of C = 5 × 10-9F/cm2.
Keywords :
Capacitance; Dark current; Indium phosphide; Inorganic materials; P-i-n diodes; PIN photodiodes; Photodetectors; Silicon compounds; Voltage; Zinc;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1981.25434
Filename :
1481918
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1078031
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