Heteroepitaxy of polycrystalline 3C-SiC film on Si substrate using AlN buffer layer

The characteristics of poly (polycrystalline) 3C-SiC grown on SiO₂ and AIN buffer layers by CVD are described. XRD and FT-IR were used to obtain the crystallinity and Si-C bonding structure of the poly 3C-SiC according to various growth temperatures and buffer layers. The surface chemical composition and the electron mobility of the poly 3C-SiC grown on each buffer layer were investigated by XPS and the Hall effect.