DocumentCode :
1078044
Title :
High mobility p-channel HFETs using strained Sb-based materials
Author :
Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A. ; Ancona, M.G. ; Champlain, J.G. ; Bass, R. ; Shanabrook, B.V.
Author_Institution :
Naval Res. Lab., Washington
Volume :
43
Issue :
15
fYear :
2007
Firstpage :
834
Lastpage :
835
Abstract :
Antimonide-based p-channel HFETs with a 0.25 mum gate length have been fabricated with an InAlSb/AlGaSb barrier and a strained In0.41Ga0.59Sb quantum well channel. The modulation-doped material exhibits a Hall mobility of 1020 cm2 /Vs and a sheet density of 1.6 x 1012 cm-2. The devices have a maximum DC transconductance of 133 mS/mm and an fT and fmax of 15 and 27 GHz, respectively. These values are the highest reported to date for this material system.
Keywords :
Hall mobility; III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; quantum well devices; Hall mobility; In0.41Ga0.59Sb; InAlSb-InGaSb; frequency 15 GHz; frequency 27 GHz; high mobility p-channel HFET; modulation-doped material; quantum well channel; size 0.25 mum;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20071305
Filename :
4278463
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1078044
بازگشت