Title :
An In0.53Ga0.47As/Si3N4n-channel inversion mode MISFET
Author :
Liao, A.S.H. ; Leheny, R.F. ; Nahory, R.E. ; De Winter, J.C.
Author_Institution :
Bell Laboratories, Holmdel, NJ, USA
fDate :
11/1/1981 12:00:00 AM
Abstract :
We describe the operation of an n-channel inversion-mode In0.53Ga0.47As MISFET with a Si3N4insulating layer. This device exhibits a transconductance of 2 mS/mm, which represents an order of magnitude improvement over previously reported In0.53Ga0.47As MISFET results.
Keywords :
Dielectrics and electrical insulation; Electron mobility; Etching; FETs; Gold; Indium phosphide; MISFETs; Semiconductor materials; Silicon; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25436
