Title :
An ultrahigh speed modulated barrier photodiode made on P-type gallium arsenide substrates
Author :
Chen, C.Y. ; Cho, A.Y. ; Garbinski, P.A. ; Bethea, C.G.
Author_Institution :
Bell Laboratories, Murray Hill, NJ, USA
fDate :
11/1/1981 12:00:00 AM
Abstract :
We demonstrate a modulated barrier photodiode (MBP) grown by molecular beam epitaxy on p-type gallium arsenide substrates. This device has an ultrahigh response speed with a rise time <30psec and a full width at half maximum <50psec. A DC optical gain of 90 has also been measured for an incident power in the nanowatt range.
Keywords :
Detectors; Gain measurement; Gallium arsenide; High speed optical techniques; Molecular beam epitaxial growth; Optical modulation; Photodetectors; Photodiodes; Power measurement; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25437
