Title :
Comment on "Effect of collisional broadening on Monte Carlo simulations of high-field transport in semiconductor devices"
Author_Institution :
University of Illinois , Urbana, IL, USA
fDate :
11/1/1981 12:00:00 AM
Abstract :
Recent Monte Carlo simulations of high-field transport in GaAs have been subject to controversy. A clarification of the aims of the validity range of this calculation is given.
Keywords :
Anisotropic magnetoresistance; Boltzmann equation; Electron mobility; Gallium arsenide; Impact ionization; Lattices; Scattering; Semiconductor devices; Temperature distribution; Uncertainty;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25440
