• DocumentCode
    1078102
  • Title

    Comment on "Effect of collisional broadening on Monte Carlo simulations of high-field transport in semiconductor devices"

  • Author

    Hess, Karl

  • Author_Institution
    University of Illinois , Urbana, IL, USA
  • Volume
    2
  • Issue
    11
  • fYear
    1981
  • fDate
    11/1/1981 12:00:00 AM
  • Firstpage
    297
  • Lastpage
    298
  • Abstract
    Recent Monte Carlo simulations of high-field transport in GaAs have been subject to controversy. A clarification of the aims of the validity range of this calculation is given.
  • Keywords
    Anisotropic magnetoresistance; Boltzmann equation; Electron mobility; Gallium arsenide; Impact ionization; Lattices; Scattering; Semiconductor devices; Temperature distribution; Uncertainty;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25440
  • Filename
    1481924
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1078102