Title :
Breakdown characteristics of gallium arsenide
Author :
Baliga, B.J. ; Ehle, R. ; Shealy, J.R. ; Garwacki, W. ; Garwacki, W.
Author_Institution :
General Electric Company, Schenectady, NY
fDate :
11/1/1981 12:00:00 AM
Abstract :
This paper presents a comparison of the experimentally measured breakdown characteristics of high-purity gallium arsenide epitaxial layers with the theoretical calculations reported in the literature. The experimental data has been obtained by forming gold Schottky barrier diodes on material grown by using two different liquid phase epitaxial growth techniques. Good agreement is observed between the measured data and the breakdown voltages calculated by Lee and Sze[4] for
Keywords :
Avalanche breakdown; Breakdown voltage; Doping; Electric breakdown; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gold; Schottky diodes; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25442
