• DocumentCode
    1078168
  • Title

    Characterization of positive resist development

  • Author

    O´Toole, M.M. ; Grande, W.J.

  • Author_Institution
    Hewlett Packard Laboratories, Palo Alto, CA
  • Volume
    2
  • Issue
    12
  • fYear
    1981
  • fDate
    12/1/1981 12:00:00 AM
  • Firstpage
    311
  • Lastpage
    313
  • Abstract
    The development of positive photoresist is assumed to be a surface limited reaction whose development rate is determined by the local inhibitor concentration M, as defined by Dill et al. This paper describes a technique for determining development rate as a function of inhibitor concentration and demonstrates the usefulness of the technique for quality control. Resist development parameters for the simulation of line edge profiles in resist are presented.
  • Keywords
    Annealing; Doping; Gallium arsenide; Glass; Implants; Inhibitors; Integrated circuit measurements; Resists; Thickness measurement; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25446
  • Filename
    1481930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1078168