DocumentCode
1078170
Title
GaInAsP lateral current injection lasers on semi-insulating substrates
Author
Oe, K. ; Noguchi, Y. ; Caneau, C.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
6
Issue
4
fYear
1994
fDate
4/1/1994 12:00:00 AM
Firstpage
479
Lastpage
481
Abstract
GaInAsP lateral current injection lasers have been fabricated on semi-insulating InP substrates. The lasers exhibit good lasing characteristics such as 10 mA threshold current, 10 mW maximum cw output power, and cw oscillation up to 70/spl deg/C. The laser has very low capacitance of 0.5 pF at zero bias voltage. This performance shows, for the first time, that the lateral current injection laser is a promising candidate for OEIC light sources.<>
Keywords
III-V semiconductors; gallium arsenide; indium compounds; light sources; semiconductor lasers; 0.5 pF; 10 mA; 10 mW; 70 C; GaInAsP; GaInAsP lateral current injection lasers; InP; InP substrates; OEIC light sources; cw oscillation; good lasing characteristics; maximum cw output power; semi-insulating substrates; threshold current,; very low capacitance; zero bias voltage; Gas lasers; Indium phosphide; Light sources; Optoelectronic devices; Power generation; Power lasers; Substrates; Threshold current; Vertical cavity surface emitting lasers; Voltage;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.281801
Filename
281801
Link To Document