Title :
MOSFET´s in electron-beam recrystallized PolySilicon
Author :
Kamins, T.I. ; Von Herzen, B.P.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA, USA
fDate :
12/1/1981 12:00:00 AM
Abstract :
MOSFET´s have been fabricated in polysilicon films recrystallized by scanned, cw electron-beam heating. The structure of the polysilicon is similar to the large-grain structure formed by cw laser recrystallization, and no significant differences were seen between the characteristics of transistors in material recrystallized by the two different types of heating.
Keywords :
Argon; Electron beams; Electrostatics; Heating; Laser beams; Laser modes; Lenses; Optical materials; Semiconductor films; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1981.25447
