Accurate determination of waveguide-fed p-i-n photodiode absorption

Author

Erman, Marko ; Renaud, Monique ; Cavaillés, J.A. ; Vinchant, Jean-Francois ; Jarry, P. ; Graver, C.

Author_Institution

Lab. d´´Electronique Philips, Limeil Brevannes, France

Volume

10

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1409

Lastpage

1414

Abstract

Experimental and theoretical determinations of the absorption of a waveguide fed GaInAs photodiode are presented. The absorption is determined as a function of the propagation length using μ-p-i-n diodes regularly spaced along the GaInAs absorbing layer. The detector absorption is as high as 2060 dB/cm. However, for propagation lengths longer than ~200 μm it falls to about 120 dB/cm. The results are analyzed using two different approaches. The first consists in determining the eigenmodes of both the passive waveguide and the detector/waveguide structure. The second is the beam propagation method (BPM). Both methods demonstrate that the absorption curve can be fully explained by the existence of two modes, of which the one with the lowest absorption is induced by the presence of an undoped InP buffer layer. Both eigenmode decomposition and BPM are in quantitative agreement with the experimental data

Keywords

III-V semiconductors; eigenvalues and eigenfunctions; gallium arsenide; indium compounds; light absorption; optical waveguide theory; p-i-n diodes; photodetectors; photodiodes; 200 micron; GaInAs; InP; absorbing layer; absorption curve; beam propagation method; detector absorption; eigenmodes; passive waveguide; propagation length; semiconductors; undoped InP buffer layer; waveguide-fed p-i-n photodiode absorption; Absorption; Detectors; Epitaxial growth; Indium phosphide; Optical receivers; Optical waveguides; P-i-n diodes; PIN photodiodes; Photoconductivity; Waveguide theory;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.166784

Filename

166784