DocumentCode :
1078227
Title :
Assessment of the Radiation Tolerance of CdZnTe and HgI _{2} to Solar Proton Events
Author :
Owens, Alan ; Brandenburg, Sytze ; Gostilo, Vladimir ; Ivanov, Victor ; Ostendorf, Reint W. ; Quarati, Francesco ; Van den Berg, Lodewijk ; Van der Graaf, Emiel R.
Author_Institution :
Eur. Space Agency/ESTEC, Noordwijk
Volume :
56
Issue :
3
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
771
Lastpage :
776
Abstract :
Single crystals of CdZnTe of dimensions 10 times 10 times 3 mm3 and HgI2 of dimensions 10 times 10 times 2 mm3 were fabricated into planar detectors. Four sets of detectors were then exposed to simulated solar proton events of varying magnitude at the Kernfysisch Versneller Instituut in the Netherlands. Events were simulated by generating protons over the energy range 60 MeV to 200 MeV in 10 energy bands which approximated the spectral shape of the August 1972 solar particle event. One pair of detectors (a CdZnTe and a HgI2) was exposed to an integral fluence of 108 protons cm-2, a second to 109 protons cm-2, a third to 1010 protons cm-2 and the fourth to 1011 protons cm-2. The latter corresponds to an absorbed dose in silicon of 100 krad or in SI units, 1 kGy. The detectors were characterized both before and after the irradiations in terms of background count rate and spectral performance using 55Fe, 109Cd, 241Am, 57Co and 137Cs radioactive sources. Typical pre-irradiation FWHM energy resolutions of 3 keV and 4 keV were recorded at 60 keV for the CdZnTe and HgI2 detectors, respectively. It was found that HgI2 is very radiation tolerant showing little degradation in energy resolution or charge collection efficiency (CCE) for input fluences up to 1011 protons cm-2. CdZnTe, on the other hand, showed a clear degradation in energy resolution and CCE for input fluences above 109 protons cm-2. For example, the energy resolution degraded by a factor of 3 between 109 and 1010 protons cm-2 while the CCE decreased by a factor of 2.
Keywords :
dosimetry; position sensitive particle detectors; radiation effects; radioactive sources; semiconductor counters; 109Cd radioactive source; 137Cs radioactive source; 241Am radioactive source; 55Fe radioactive source; 57Co radioactive source; CdZnTe detector; HgI2 detector; absorbed dose; charge collection efficiency; electron volt energy 60 MeV to 200 MeV; preirradiation; radiation absorbed dose 1 kGy; radiation tolerance; size 10 mm; size 2 mm; size 3 mm; solar proton events; Crystals; Degradation; Detectors; Discrete event simulation; Energy resolution; Event detection; Protons; Silicon; Solar power generation; Spectral shape; $hbox{HgI}_{2}$ ; CdZnTe; compound semiconductors; radiation; radiation damage; spectroscopy;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2015307
Filename :
5075941
Link To Document :
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