Electroabsorption properties of InGaAs/InAlAs multiple quantum well structures at 1.5 μm

Author

Chin, M.K. ; Chang, W.S.C.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

6

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

502

Lastpage

504

Abstract

The electroabsorption properties of InGaAs/InAlAs MQW structures are characterised in terms of /spl Delta//spl alpha/, /spl Delta//spl alpha//F and /spl Delta//spl alpha///spl alpha/₀, where /spl Delta//spl alpha/ is the electroabsorption, /spl alpha/₀ is the residual absorption coefficient under zero bias, and F is the applied electric field. The limitations of these structures for 1.5 μm modulators are primarily due to the relatively small /spl Delta//spl alpha//F values as a result of the small well width. The results are compared with the literature.

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical modulation; semiconductor quantum wells; 1.5 /spl mu/m modulators; 1.5 mum; InGaAs-InAlAs; InGaAs/InAlAs; MQW; applied electric field; electroabsorption properties; multiple quantum well structures; residual absorption coefficient; small well width; zero bias; Absorption; Composite materials; Indium compounds; Indium gallium arsenide; Indium phosphide; Material properties; Optical modulation; PIN photodiodes; Propagation losses; Quantum well devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.281809

Filename

281809