Integrated silicon microbeam PI-FET accelerometer

Author

Chen, Pau-Ling ; Muller, Richard S. ; Jolly, Richard D. ; Halac, Gregory L. ; White, Richard M. ; Andrews, Angus P. ; Lim, Teong C. ; Motamedi, M.E.

Author_Institution

University of California, Berkeley, CA

Volume

29

Issue

1

fYear

1982

fDate

1/1/1982 12:00:00 AM

Firstpage

27

Lastpage

33

Abstract

Integrated accelerometers showing excellent linearity have been designed and fabricated using silicon planar technology, zinc-oxide sputtering, and anisotropic etching. Small cantilevered beam structures overcoated with piezoelectric ZnO films act as force transducers, and the electrical signal is directly coupled to the gate of a depletion-mode, p-channel MOS transistor. The accelerometers have a nearly flat response from very low frequencies until beam resonances become significant (above 40 kHz). The near-dc response results from completely isolating the piezoelectric film from electrical leakage paths. Measured performance has matched very well with theory. Theoretical analysis has been used to derive useful design tradeoffs.

Keywords

Accelerometers; Anisotropic magnetoresistance; Linearity; Piezoelectric films; Piezoelectric transducers; Silicon; Sputter etching; Sputtering; Structural beams; Zinc oxide;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1982.20654

Filename

1482151