Nitride-based flip-chip LEDs with transparent Ohmic contacts and reflective mirrors

Author

Chang, S.J. ; Chen, W.S. ; Lin, Y.C. ; Chang, C.S. ; Ko, T.K. ; Hsu, Y.P. ; Shen, C.F. ; Tsai, J.M. ; Shei, S.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

29

Issue

3

fYear

2006

Firstpage

403

Lastpage

408

Abstract

Nitride-based flip-chip light-emitting diodes (LEDs) with various transparent ohmic contacts and reflective mirrors were fabricated. At 470 nm, it was found that Ni could provide 92% transmittance while Ag could provide 92.4% reflectively. It was also found that the 20-mA forward voltages measured from LEDs with Ni+Ag, Ni+Al, and Ni+Pt were 3.15, 3.29, and 3.18 V while the output powers were 16, 13.3, and 11.6 mW, respectively. Furthermore, it was found that lifetimes of the fabricated flip-chip LEDs were good

Keywords

III-V semiconductors; flip-chip devices; gallium compounds; light emitting diodes; mirrors; nickel compounds; ohmic contacts; 11.6 mW; 13.3 mW; 16 mW; 20 mA; 470 nm; GaN; Ni-Ag; Ni-Al; Ni-Pt; light-emitting diodes; nitride-based flip-chip LED; reflective mirrors; transparent ohmic contacts; Conducting materials; Contact resistance; Gallium nitride; Gold; Indium tin oxide; Light emitting diodes; Mirrors; Ohmic contacts; Power generation; Thermal conductivity; Flip-chip; GaN; light-emitting diodes (LED); reflective mirrors; transparent ohmic contact;

fLanguage

English

Journal_Title

Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1521-3323

Type

jour

DOI

10.1109/TADVP.2006.871189

Filename

1667857