DocumentCode :
1078458
Title :
Mesa-substrate buried heterostructure GaInAsP/InP injection lasers
Author :
Kishino, Katsumi ; Suematsu, Yasuharu ; Itaya, Y.
Author_Institution :
Tokyo Institute of Technology, Tokyo, Japan
Volume :
15
Issue :
9
fYear :
1979
fDate :
9/1/1979 12:00:00 AM
Firstpage :
996
Lastpage :
997
Keywords :
Semiconductor lasers; Epitaxial growth; Indium phosphide; Laser modes; Laser stability; Semiconductor lasers; Space vector pulse width modulation; Substrates; Temperature dependence; Temperature distribution; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1979.1070207
Filename :
1070207
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1078458
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