DocumentCode :
1078561
Title :
Electron mobility in n-channel depletion-type MOS transistors
Author :
Ohno, Yasuo ; Okuto, Yuji
Author_Institution :
Nippon Electric Co., Ltd., Kawasaki, Japan
Volume :
29
Issue :
2
fYear :
1982
fDate :
2/1/1982 12:00:00 AM
Firstpage :
190
Lastpage :
194
Abstract :
It is found that surface electron mobility can exceed electron mobility in bulk. Field-effect mobilities of n-channel depletion-type MOS transistors were measured, comparing transistor 
and diode 
characteristics. Electron mobility in a highly doped n-type channel layer exceeds that in bulk at around the onset of surface accumulation. This can be explained by reduction in ionized impurity scattering under accumulation conditions. In accumulation conditions, excessive electrons screen the Coulombic field from ionized impurities. This is confirmed by theoretical calculation based on the Maxwell-Boltzmann distribution of electrons and electron-concentration-dependent electron mobility.
and diode characteristics. Electron mobility in a highly doped n-type channel layer exceeds that in bulk at around the onset of surface accumulation. This can be explained by reduction in ionized impurity scattering under accumulation conditions. In accumulation conditions, excessive electrons screen the Coulombic field from ionized impurities. This is confirmed by theoretical calculation based on the Maxwell-Boltzmann distribution of electrons and electron-concentration-dependent electron mobility.Keywords :
Capacitance measurement; Diodes; Electron mobility; FETs; Impurities; MOSFETs; Scattering; Silicon; Transconductance; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20682
Filename :
1482179
Link To Document :
