GaAs MESFET´s by molecular beam epitaxy

The noise performance of "T" shaped Ti/W/Au gate GaAs Schottky-barrier field-effect transistors fabricated on channel layers grown by molecular-beam epitaxy (MBE) is reported. The nominal gate length was about 0.7 µm with a total gate width of 250 µm. Typical noise figure and the associated gain were 1.2 and 14 dB at 4 GHz, and 1.9 and 8.5 dB at 12 GHz. To out knowledge these are the best results reported to date on devices fabricated using MBE-grown GaAs. These preliminary results show the promise of MBE for high-quality GaAs FET\´s.