Title :
Novel low-loss and high-speed diode utilizing an "Ideal" ohmic contact
Author :
Amemiya, Yoshihito ; Sugeta, Takayuki ; Mizushima, Yoshihiko
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
2/1/1982 12:00:00 AM
Abstract :
A novel electrode structure to realize an "ideal" ohmic contact is proposed. A new kind of low-loss and high-speed diode (LLD) is realized by utilizing this electrode structure. LLD shows a remarkably fast recovery as a Schottky diode, using no gold doping, while the reverse blocking voltage and operating temperature limit are far higher than for a Schottky diode. LLD is easily incorporated into monolithic combination with transistors, and is useful for various power applications.
Keywords :
Doping; Electrodes; Gold; Ohmic contacts; Power semiconductor switches; Rectifiers; Schottky diodes; Semiconductor diodes; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20690
