Channel-collector transistors

By merging the channel regions of two-junction field-effect transistors with the collector region of a bipolar junction transistor (BJT), one achieves a quasi-cascode configuration called a Channel-Collector Transistor (CCT). Its terminal properties are those of a modified, improved bipolar transistor. Prototype devices have been fabricated with common-emitter current gain (βF) in excess of 1200 while still maintaining the common-emitter, open-base breakdown voltage (BVCE0) greater than 140 V and the output resistance r0typically greater than 200 kΩ. The present brief describes an efficient, qualitative equivalent circuit for the structure and also presents an experimental device graphically illustrating the CCT´s advantages and disadvantages when compared to a conventional BJT.