• DocumentCode
    1078800
  • Title

    Verification of the equivalent circuit of a channel-collector transistor by two-dimensional numerical simulation

  • Author

    Zipperian, Thomas E.

  • Author_Institution
    Sandia National Laboratories, Albuquerque, NM
  • Volume
    29
  • Issue
    2
  • fYear
    1982
  • fDate
    2/1/1982 12:00:00 AM
  • Firstpage
    344
  • Lastpage
    346
  • Abstract
    Two-dimensional numerical simulation has been used to qualitatively verify that the collector region of a Channel-Collector Transistor (CCT) functions simultaneously as the collector of a conventional bipolar junction transistor (BJT) and the channel region of a junction field-effect transistor (JFET). Numerical simulation also confirmed that the collector region may be modeled as two JFET´s in series, with the second being fully merged with other regions of the device.
  • Keywords
    Charge carrier processes; Equivalent circuits; FETs; Numerical models; Numerical simulation; Poisson equations; Radiative recombination; Semiconductor process modeling; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20706
  • Filename
    1482203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1078800