• DocumentCode
    1078810
  • Title

    A simple and accurate method to measure the threshold voltage of an enhancement-mode MOSFET

  • Author

    Lee, Hee-Gook ; Oh, Soo-young ; Fuller, Glen

  • Author_Institution
    Hewlett-Packard Co., Cupertino, CA
  • Volume
    29
  • Issue
    2
  • fYear
    1982
  • fDate
    2/1/1982 12:00:00 AM
  • Firstpage
    346
  • Lastpage
    348
  • Abstract
    A new, simple method to measure the VTof an enhancement-mode MOSFET has been developed based on the analytical model of the subthreshold current. VTis determined to be the gate voltage at which the IDSreaches the constant threshold current, and this method is accurate over a wide range of device dimensions, bias conditions, and operating temperatures.
  • Keywords
    Circuit simulation; Computerized monitoring; Current measurement; Geometry; Intrusion detection; MOSFET circuits; Threshold current; Threshold voltage; Time measurement; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20707
  • Filename
    1482204
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1078810