Title :
A simple and accurate method to measure the threshold voltage of an enhancement-mode MOSFET
Author :
Lee, Hee-Gook ; Oh, Soo-young ; Fuller, Glen
Author_Institution :
Hewlett-Packard Co., Cupertino, CA
fDate :
2/1/1982 12:00:00 AM
Abstract :
A new, simple method to measure the VTof an enhancement-mode MOSFET has been developed based on the analytical model of the subthreshold current. VTis determined to be the gate voltage at which the IDSreaches the constant threshold current, and this method is accurate over a wide range of device dimensions, bias conditions, and operating temperatures.
Keywords :
Circuit simulation; Computerized monitoring; Current measurement; Geometry; Intrusion detection; MOSFET circuits; Threshold current; Threshold voltage; Time measurement; Voltage measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20707
