DocumentCode :
1078847
Title :
Capture and escape in quantum wells as scattering events in Monte Carlo simulation
Author :
Abou-Khalil, Michel ; Goano, Michele ; Champagne, Alain ; Maciejk, Roman
Author_Institution :
Dept. de Genie Phys., Ecole Polytech. de Montreal, Que., Canada
Volume :
8
Issue :
1
fYear :
1996
Firstpage :
19
Lastpage :
21
Abstract :
The capture and escape in quantum wells are considered as scattering events in Monte Carlo simulation. Explicit expressions are derived for these interaction rates which depend on carrier initial energy. The expressions are applied to calculate the electron overall capture time in a GRINSCH quantum well at 300 K.
Keywords :
Monte Carlo methods; electron traps; gradient index optics; semiconductor quantum wells; 300 K; GRINSCH quantum well; Monte Carlo simulation; capture; carrier scattering; escape; Carrier confinement; Electrons; Energy capture; Energy states; Monte Carlo methods; Optical scattering; Particle scattering; Phonons; Quantum well devices;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.475764
Filename :
475764
Link To Document :
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