SOS MOSFET two-dimensional analysis

Two-dimensional analysis of short-channel SOS MOSFET´s is presented, The analysis is based on the circular-field-line approximation to determine the boundary conditions in the sapphire substrate. Si-sapphire interface-state effects are taken into account. Using this analysis method, short-channel SOS MOSFET characteristics were investigated. The electric-field lines, originating from the drain, are terminated not only in the Si substrate charge but also in the interface states. The interface states can suppress the short-channel effects in either n- or p-channel SOS MOSFET´s. Predicted characteristics agree with the experimental results.