Locking characteristics of a passively mode-locked monolithic DBR laser stabilized by optical injection

Author

Ahmed, Z. ; Liu, H.F. ; Novak, D. ; Ogawa, Y. ; Pelusi, M.D. ; Kim, D.Y.

Author_Institution

Dept. of Electr. & Electron. Eng., Melbourne Univ., Parkville, Vic., Australia

Volume

8

Issue

1

fYear

1996

Firstpage

37

Lastpage

39

Abstract

We demonstrate the generation of ultrastable millimeter-wave carriers from a passively mode-locked monolithic InGaAs MQW DBR laser injection locked by a double sideband suppressed carrier modulated optical signal. We investigate the effect of the optical power and the wavelength of the injection signal on the phase noise of the generated millimeter-wave carrier. Once locked, the laser can track the variations in the beat frequency of the injected millimeter-wave signal over an RF frequency range of approximately 172 MHz.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; laser mode locking; laser noise; laser stability; millimetre wave lasers; optical modulation; phase noise; quantum well lasers; InGaAs; RF frequency range; beat frequency; double sideband suppressed carrier modulated optical signal; injected millimeter-wave signal; injection signal wavelength effects; locking characteristics; millimeter-wave carrier; monolithic InGaAs MQW DBR laser injection locking; optical injection; optical power; passively mode-locked; passively mode-locked monolithic DBR laser stabilised; phase noise; ultrastable millimeter-wave carriers; Distributed Bragg reflectors; Frequency; Indium gallium arsenide; Laser mode locking; Laser noise; Laser stability; Optical modulation; Optical noise; Quantum well devices; Signal generators;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.475770

Filename

475770