Title :
High-energy coherent chirped pulses from multisection laser diode with thick active layer
Author :
Shen, A. ; Stelmakh, N. ; Lourtioz, J.-M. ; Bonnefont, S. ; Lozes-Dupuy, F. ; Dagens, B.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
Abstract :
High-energy (100 pJ) picosecond pulses are obtained from Q-switched AlGaAs multisection lasers with a thick (0.45-μm) active layer. Single longitudinal mode operation in the Q-switching regime is achieved by injecting monochromatic optical pulses into the active region. Chirp amplitude and pulse energy are measured for different electrical pumping conditions in the absorber sections. High values of the time-bandwidth product of pulses (up to 30) are observed, it is shown that the chirp amplitude can reach 10 /spl Aring/. Therefore, it is expected that the 100 pJ coherent optical pulses can be compressed down to 1-2 ps, which represents attractive performances for compact short-pulse light sources.
Keywords :
III-V semiconductors; Q-switching; aluminium compounds; chirp modulation; gallium arsenide; high-speed optical techniques; laser modes; optical modulation; optical pulse compression; semiconductor lasers; 0.45 mum; 1 to 2 ps; 100 pJ; AlGaAs; Q-switched AlGaAs multisection lasers; Q-switching regime; absorber sections; chirp amplitude; coherent optical pulses; electrical pumping conditions; high-energy coherent chirped pulses; monochromatic optical pulse injection; multisection laser diode; optical pulse compression; picosecond pulses; pulse energy; short-pulse light sources; single longitudinal mode operation; thick active layer; time-bandwidth product; Chirp; Diode lasers; Laser modes; Light sources; Master-slave; Optical pulses; Pulse amplifiers; Pulse measurements; Semiconductor lasers; Senior members;
Journal_Title :
Photonics Technology Letters, IEEE
