Title :
Airbridged high-speed AlGaAs-GaAs ridge waveguide lasers
Author :
Dong, Haozhe ; Williamson, Fred ; Gopinath, Anand
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
The design of a high modulation response multiple-quantum-well ridge waveguide laser in AlGaAs-GaAs, with low parasitics is discussed. The device was fabricated on a semi-insulating substrate with a wide top contact, and airbridges have been used to connect the ridge top contact to the bonding pads on the semi-insulating substrate. The 3-dB frequency response of the laser has been measured to be 21 GHz, which is a record for unstrained quantum-well AlGaAs-GaAs lasers.
Keywords :
III-V semiconductors; aluminium compounds; frequency response; gallium arsenide; optical modulation; quantum well lasers; ridge waveguides; waveguide lasers; AlGaAs-GaAs; airbridged high-speed AlGaAs-GaAs ridge waveguide lasers; bonding pads; frequency response; high modulation response; low parasitics; multiple-quantum-well ridge waveguide laser; ridge top contact; semi-insulating substrate; unstrained quantum-well AlGaAs-GaAs lasers; wide top contact; Bandwidth; Carrier confinement; Frequency; Laser modes; Optical design; Optical modulation; Optical waveguides; Quantum well lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
