Airbridged high-speed AlGaAs-GaAs ridge waveguide lasers

Author

Dong, Haozhe ; Williamson, Fred ; Gopinath, Anand

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

8

Issue

1

fYear

1996

Firstpage

46

Lastpage

48

Abstract

The design of a high modulation response multiple-quantum-well ridge waveguide laser in AlGaAs-GaAs, with low parasitics is discussed. The device was fabricated on a semi-insulating substrate with a wide top contact, and airbridges have been used to connect the ridge top contact to the bonding pads on the semi-insulating substrate. The 3-dB frequency response of the laser has been measured to be 21 GHz, which is a record for unstrained quantum-well AlGaAs-GaAs lasers.

Keywords

III-V semiconductors; aluminium compounds; frequency response; gallium arsenide; optical modulation; quantum well lasers; ridge waveguides; waveguide lasers; AlGaAs-GaAs; airbridged high-speed AlGaAs-GaAs ridge waveguide lasers; bonding pads; frequency response; high modulation response; low parasitics; multiple-quantum-well ridge waveguide laser; ridge top contact; semi-insulating substrate; unstrained quantum-well AlGaAs-GaAs lasers; wide top contact; Bandwidth; Carrier confinement; Frequency; Laser modes; Optical design; Optical modulation; Optical waveguides; Quantum well lasers; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.475773

Filename

475773